Features: 500V , 6.6A , RDS(ON)=1Ω @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package.Specifications Parameter Symbol Limit Unit Drain-Source Voltage VDS 500 V Gate-Sourc...
CEP06N5: Features: 500V , 6.6A , RDS(ON)=1Ω @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package.Specifications ...
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Parameter |
Symbol |
Limit |
Unit |
Drain-Source Voltage |
VDS |
500 |
V |
Gate-Source Voltage |
VGS |
±30 |
V |
Drain Current-Continuous -Pulsed |
ID |
6.6 |
A |
IDM |
20 |
A | |
Drain-Source Diode Forward Current |
IS |
6.6 |
A |
Maximum Power Dissipation @Tc=25 oC Derate above 25 oC |
PD |
104 |
W |
0.83 |
W/oC | ||
Operating and Storage Temperautre Range |
TJ, TSTG |
-55 to 150 |
oC |