Features: 30V , 7.5A , RDS(ON)=21m @VGS=10V. RDS(ON)=30m @VGS=4.5V.-30V , -5.0A , RDS(ON)=50m @VGS=-10V.RDS(ON)=75m @VGS=-4.5VSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Surface Mount Package.Specifications Parameter Symbol N-Channel P...
CEM8401: Features: 30V , 7.5A , RDS(ON)=21m @VGS=10V. RDS(ON)=30m @VGS=4.5V.-30V , -5.0A , RDS(ON)=50m @VGS=-10V.RDS(ON)=75m @VGS=-4.5VSuper high dense cell design for extremely low RDS(ON).High power and cu...
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30V , 7.5A , RDS(ON)=21m @VGS=10V.
RDS(ON)=30m @VGS=4.5V.
-30V , -5.0A , RDS(ON)=50m @VGS=-10V.
RDS(ON)=75m @VGS=-4.5V
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Surface Mount Package.
Parameter | Symbol | N-Channel | P-Channel | Unit |
Drain-Source Voltage | VDS | 30 | -30 | V |
Gate-Source Voltage | VGS | ±20 | ±20 | V |
Drain Current-Continuous a -Pulsed b |
ID | ±7.5 | ±5.0 | A |
IDM | ±30 | ±20 | A | |
Drain-Source Diode Forward Current a | IS | 2.3 | -2.3 | A |
Maximum Power Dissipation a | PD |
2.0 |
W | |
Operating Junction and Storage Temperature Range | TJ, TSTG |
-55 to 150 |