Features: 30V , 4.7A , RDS(ON)=55m @VGS=10V. RDS(ON)=85m @VGS=4.5V.-30V , -4.5A , RDS(ON)=80m @VGS=-10V.RDS(ON)=135m @VGS=-4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Surface Mount Package.Specifications Parameter Symbol Limit Unit...
CEM4532: Features: 30V , 4.7A , RDS(ON)=55m @VGS=10V. RDS(ON)=85m @VGS=4.5V.-30V , -4.5A , RDS(ON)=80m @VGS=-10V.RDS(ON)=135m @VGS=-4.5V.Super high dense cell design for extremely low RDS(ON).High power and ...
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30V , 4.7A , RDS(ON)=55m @VGS=10V.
RDS(ON)=85m @VGS=4.5V.
-30V , -4.5A , RDS(ON)=80m @VGS=-10V.
RDS(ON)=135m @VGS=-4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Surface Mount Package.
Parameter | Symbol | Limit | Unit |
Drain-Source Voltage | VDS | 20 | V |
Gate-Source Voltage | VGS | ±8 | V |
Drain Current-Continuous a -Pulsed b |
ID | ±4.5 | A |
IDM | ±25 | A | |
Drain-Source Diode Forward Current a | IS | 1.7 | A |
Maximum Power Dissipation a | PD | 1.0 | W |
Operating Junction and Storage Temperature Range | TJ, TSTG | -65 to 175 |