Features: 450V ,5.6A ,RDS(ON)= 700m @VGS=10V.Super high dense cell design for extremely low RDS(ON).High power and current handling capability.TO-220F full-pak for through hole.Description Parameter Symbol Limit Unit Drain-Source Voltage VDS 450 V Gate-Source Voltage VGS ±30 ...
CEF10N4: Features: 450V ,5.6A ,RDS(ON)= 700m @VGS=10V.Super high dense cell design for extremely low RDS(ON).High power and current handling capability.TO-220F full-pak for through hole.Description Para...
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450V ,5.6A ,RDS(ON)= 700m @VGS=10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handling capability.
TO-220F full-pak for through hole.
Parameter | Symbol | Limit | Unit |
Drain-Source Voltage | VDS | 450 | V |
Gate-Source Voltage | VGS | ±30 | V |
Drain Current-Continuous (Tc=25 ) -Pulsed |
ID | 5.6 | A |
IDM | 17 | A | |
Drain-Source Diode Forward Current | IS | 5.6 | A |
Maximum Power Dissipation @Tc=25 Derate above 25 |
PD | 45 | W |
0.36 | W/ | ||
Operating and Storage Temperature Range | TJ, TSTG | -55 to 150 |