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CEF10N4

Features: 450V ,5.6A ,RDS(ON)= 700m @VGS=10V.Super high dense cell design for extremely low RDS(ON).High power and current handling capability.TO-220F full-pak for through hole.Description Parameter Symbol Limit Unit Drain-Source Voltage VDS 450 V Gate-Source Voltage VGS ±30 ...

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CEF10N4: Features: 450V ,5.6A ,RDS(ON)= 700m @VGS=10V.Super high dense cell design for extremely low RDS(ON).High power and current handling capability.TO-220F full-pak for through hole.Description Para...

CEF10N4 Data Sheet

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Part Number:
CEF10N4
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/24

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Product Details

Description



Features:

450V ,5.6A ,RDS(ON)= 700m @VGS=10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handling capability.
TO-220F full-pak for through hole.






Description

Parameter Symbol Limit Unit
Drain-Source Voltage VDS 450 V
Gate-Source Voltage VGS ±30 V
Drain Current-Continuous (Tc=25 )
-Pulsed		 ID 5.6 A
IDM 17 A
Drain-Source Diode Forward Current IS 5.6 A
Maximum Power Dissipation @Tc=25
Derate above 25 		PD 45 W
0.36 W/
Operating and Storage Temperature Range TJ, TSTG -55 to 150





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