Features: 600V , 2.5A , RDS(ON)=2.5 @VGS=10V.Super high dense cell design for extremely low RDS(ON).High power and current handling capability.TO-220F full-pak for through holeSpecifications Parameter Symbol Limit Unit Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS ±30...
CEF04N6: Features: 600V , 2.5A , RDS(ON)=2.5 @VGS=10V.Super high dense cell design for extremely low RDS(ON).High power and current handling capability.TO-220F full-pak for through holeSpecifications Pa...
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600V , 2.5A , RDS(ON)=2.5 @VGS=10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handling capability.
TO-220F full-pak for through hole
Parameter | Symbol | Limit | Unit |
Drain-Source Voltage | VDS | 600 | V |
Gate-Source Voltage | VGS | ±30 | V |
Drain Current-Continuous (Tc=25 ) -Pulsed |
ID | 2.5 | A |
IDM | 10 | A | |
Drain Current-Pulsed a | IS | 2.5 | A |
Maximum Power Dissipation @Tc=25 Derate above 25 |
PD | 35 | W |
0.28 | W/ | ||
Operating and Storage Temperature Range | TJ, TSTG | -55 to 155 |