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CEB60N10

Features: 100V, 60A, RDS(ON) = 23.5mW @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.TO-220 & TO-263 package.Specifications Parameter Symbol Limit Unit Drain-Source Voltage VDS 100 V G...

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SeekIC No. : 004312695 Detail

CEB60N10: Features: 100V, 60A, RDS(ON) = 23.5mW @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.TO-220 & TO-263 pa...

CEB60N10 Data Sheet

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Part Number:
CEB60N10
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

100V, 60A, RDS(ON) = 23.5mW @VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 package.






Specifications

Parameter Symbol Limit Unit
Drain-Source Voltage VDS 100 V
Gate-Source Voltage VGS ±20 V
Drain Current-Continuous ID 60 A
Drain Current-Pulsed a IDM 240 A
Maximum Power Dissipation @T=25
Derate above 25 		PD 200 W
1.3 W/
Single Pulsed Avalanche Energy d EAS 148 mJ
Single Pulsed Avalanche Current d IAS 46 A
Operating and Storage Temperature Range TJ, TSTG -65 to 175





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