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CEB06N5

Features: 500V , 6.6A , RDS(ON)=1Ω @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package.Specifications Parameter Symbol Limit Unit Drain-Source Voltage VDS 500 V Gate-Sourc...

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CEB06N5: Features: 500V , 6.6A , RDS(ON)=1Ω @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package.Specifications ...

CEB06N5 Data Sheet

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Part Number:
CEB06N5
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

500V , 6.6A , RDS(ON)=1Ω @VGS=10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handling capability.
TO-220 & TO-263 package.



Specifications

Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
500
V
Gate-Source Voltage
VGS
±30
V

Drain Current-Continuous
                            -Pulsed
ID
6.6
A
IDM

20
A
Drain-Source Diode Forward Current
IS
6.6
A
Maximum Power Dissipation @Tc=25 oC
                               Derate above 25 oC

PD
104
W
0.83
W/oC
Operating and Storage Temperautre Range
TJ, TSTG
-55 to 150
oC



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