Features: • On-chip bias resistor: R1 = 2.2 kΩ, R2 = 10 kΩ• Low power consumption during driving: VOL = 0.12 V @VI = 5.0 V, IC = 0.5 A• On-chip dumper diode for reverse cableSpecifications Parameter Symbol Ratings Unit Collector to base voltage ...
CE2F3P: Features: • On-chip bias resistor: R1 = 2.2 kΩ, R2 = 10 kΩ• Low power consumption during driving: VOL = 0.12 V @VI = 5.0 V, IC = 0.5 A• On-chip dumper diode for reverse...
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Parameter |
Symbol |
Ratings |
Unit |
Collector to base voltage |
VCBO |
60±10 |
V |
Collector to emitter voltage |
VCEO |
60±10 |
V |
Emitter to base voltage |
VEBO |
15 |
V |
Collector current (DC) |
IC(DC) |
±2.0 |
A |
Collector current (Pulse) |
IC(pulse) * |
±3.0 |
A |
Base current (DC) |
IB(DC) |
0.03 |
A |
Total power dissipation |
PT |
1.0 |
W |
Junction temperature |
Tj |
150 |
°C |
Storage temperature |
Tstg |
−55 to +150 |
°C |
The CE2F3P is a transistor of on-chip high hFE resistor incorporating dumper diode in collector to emitter as protect elements. This transistor is ideal for actuator drives of OA equipments and electric equipments.