Features: • On-chip zener diode for surge voltage absorption• On-chip bias resistor: R1 = 2.2 kΩ, R2 = 10 kΩ• Low power consumption during driving: VOL = 0.12 V @VI = 5.0 V, IC = 0.5 A• On-chip dumper diode for reverse cableSpecifications Parameter Sy...
CE1F3P: Features: • On-chip zener diode for surge voltage absorption• On-chip bias resistor: R1 = 2.2 kΩ, R2 = 10 kΩ• Low power consumption during driving: VOL = 0.12 V @VI = 5...
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Parameter |
Symbol |
Ratings |
Unit |
Collector to base voltage |
VCBO |
60±10 |
V |
Collector to emitter voltage |
VCEO |
60±10 |
V |
Emitter to base voltage |
VEBO |
15 |
V |
Collector current (DC) |
IC(DC) |
±2.0 |
A |
Collector current (Pulse) |
IC(pulse) * |
±3.0 |
A |
Base current (DC) |
IB(DC) |
0.03 |
A |
Total power dissipation |
PT |
1.0 |
W |
Junction temperature |
Tj |
150 |
°C |
Storage temperature |
Tstg |
−55 to +150 |
°C |
The CE1F3P is a transistor of on-chip high hFE resistor incorporating dumper diode in collector to emitter and zener diode in collector to base as protect elements. This transistor is ideal for actuator drives of OA equipments and electric equipments.