CDSH270

Schottky (Diodes & Rectifiers) 100V 100mA Rec

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SeekIC No. : 00187036 Detail

CDSH270: Schottky (Diodes & Rectifiers) 100V 100mA Rec

floor Price/Ceiling Price

US $ .14~.21 / Piece | Get Latest Price
Part Number:
CDSH270
Mfg:
Central Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.21
  • $.17
  • $.15
  • $.14
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/5/14

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Product Details

Quick Details

Product : Schottky Diodes Peak Reverse Voltage : 100 V
Forward Continuous Current : 0.1 A Max Surge Current : 0.75 A
Configuration : Single Forward Voltage Drop : 1 V at 0.2 A
Maximum Reverse Leakage Current : 0.1 uA at 50 V Operating Temperature Range : - 65 C to + 125 C
Mounting Style : Through Hole Package / Case : DO-35
Packaging : Reel    

Description

Recovery Time :
Maximum Power Dissipation :
Mounting Style : Through Hole
Configuration : Single
Product : Schottky Diodes
Packaging : Reel
Peak Reverse Voltage : 100 V
Operating Temperature Range : - 65 C to + 125 C
Maximum Reverse Leakage Current : 0.1 uA at 50 V
Package / Case : DO-35
Max Surge Current : 0.75 A
Forward Continuous Current : 0.1 A
Forward Voltage Drop : 1 V at 0.2 A


Description

The CDSH270 is a silicon schottky diode specially designed to replace germanium diodes manufactured with 1950's technology like the 1N270, 1N277, etc. with 1990's technology. Some advantage of this new technology are lower forward voltage, lower leakage, faster switvhing speed, and a more robust package.

The absolute maximum ratings of the CDSH270 are: 1)peak repetitive reverse voltage: 100V; (2)continuous forward current: 100mA; (3)peak forward current(repetitive, t1s, 0.5s): 350mA; (4)peak forward surge current(non-repetitive, t=10ms): 750mA; (5)power dissipation: 100mW; (6)junction temperature: -65 to +125; (7)storage temperature: -65 to +150; (8)thermal resistance: 300/W.

The following is about the electrical characteristics of CDSH270: (1)IR: 100nA max at VR=50V; (2)IR: 20A max at VR=50V, TA=100; (3)VF: 0.45V max at IF=1.0mA; (4)VF: 0.9V typical at IF=100mA; (5)VF: 1.0V max at IF=200mA; (6)CJ: 1.2pF typical at VR=10V, f=1.0MHz.




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