Features: ESD protection according to IEC 61000-4-2 (Level 4) High ESD robustness: 3000 ESD pulses minimum (IEC 61000-4-2 Level 4)Suitable for uni- and bidirectional linesBidirectional ESD protection in a two-pin deviceRoutes all ESD events, both positive and negative, safely ...
CDS4C12GTA: Features: ESD protection according to IEC 61000-4-2 (Level 4) High ESD robustness: 3000 ESD pulses minimum (IEC 61000-4-2 Level 4)Suitable for uni- and bidirectional linesBidire...
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Rating | Symb. | Value | Unit |
Max. DC working voltage | VDC | 12 | V |
Max. RMS working voltage | VRMS | 9 | V |
Peak current @ 8/ 20 s | IPP | 20 | A |
Air discharge ESD capability (according to IEC 61000-4-2 method) |
VESD | 15 | kV |
Contact discharge ESD capability (according to IEC 61000-4-2 method) |
VESD | 8 | kV |
Operating temperature (without derating) |
Top | −40 to +85 | °C |
Storage temperature | Tstg | −40 to +125 | °C |
Due to the ongoing miniaturization, today's electronic devices CDS4C12GTA are more and more sensitive to electrostatic discharges (ESD) and overvoltages. Therefore reliable protection components become absolutely necessary to harden your valuable electronics against the impact of ESD.
CeraDiodes CDS4C12GTA are ceramic semiconductors optimized specifically for high performance in Electro Static Discharge (ESD) applications. The device has a non-linear voltage/current characteristic that is highly optimized for effectively suppressing extremely fast voltage transients. The device offers superior parametric stability over the complete operating range of 40 °C to +85 °C.
CeraDiodes CDS4C12GTA are bi-directional devices. A single CeraDiode® connected from signal/dataline to ground routes both positive and negative ESD transitions safely to the ground plane. This technique eliminates the need to route ESD charge into the power plane, possibility damaging nearby integrated circuits.