Features: ` Matched Pair of Transistors for Optimum` Balanced Amplifier Design` AlGaAs/InGaAs/AlGaAs Pseudomorphic High` Electron Mobility Transistor (pHEMT)` High Gain:-25 dB @ 900 MHz-21 dB @ 1900 MHz` Low Noise Figure:-0.6 dB @ 900 MHz-0.7 dB @ 1900 MHz-17 dBm P1dB at 2 GHz-33 dBm OIP3 at 2 GHz...
CDQ0303-QS: Features: ` Matched Pair of Transistors for Optimum` Balanced Amplifier Design` AlGaAs/InGaAs/AlGaAs Pseudomorphic High` Electron Mobility Transistor (pHEMT)` High Gain:-25 dB @ 900 MHz-21 dB @ 1900...
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Parameter | Rating | Parameter | Rating | Parameter | Rating |
Drain-Source Voltage 2 | +5.5V | Drain Current 2 | Idss3 A | Channel Temperature | +175ºC |
Gate-Source Voltage 2 | -5.0V | Total Pwr Dissipation | 1.12W | Storage Temperature | -65ºC to +160ºC |
Gate-Drain Voltage 2 | -5.0V | RF Input Power | 17 dBm | Thermal Resistance | 70ºC/W |
The CDQ0303-QS is a dual, ultra low-noise amplifier combining high gain, state-of-the-art noise figure and high IP3. Utilizing Mimix's distinctive in-house GaAs fabrication advantage and matched pair technology, co-located matched transistor die are assembled in the 4mm x 4mm QFN package. The low-cost, surface-mount, 16 terminal, plastic package is also lead-free.
Packaging a matched pair of ultra low-noise devices in a single package makes the CDQ0303-QS an ideal product for balanced amplifier implementation. It is intended for many applications operating in the 900 MHz to 2400 MHz frequency range. It can also be used in a dual-band configuration where a single transistor is used for each band.
Mimix's high performance packaged pHEMTs are ideal for use in all applications where low-noise figure, high gain, medium power and good intercept is required. The CDQ0303-QS is the perfect solution for the first or second stage of a base station LNA due to the excellent combination of low-noise figure and linearity. It is also well suited as a medium power driver stage in pole-top amplifiers and other transmit functions, particularly as the low thermal resistance allows extended power dissipation when voltage and current are adjusted for increased power and linearity.