CDQ0303-QS

Features: ` Matched Pair of Transistors for Optimum` Balanced Amplifier Design` AlGaAs/InGaAs/AlGaAs Pseudomorphic High` Electron Mobility Transistor (pHEMT)` High Gain:-25 dB @ 900 MHz-21 dB @ 1900 MHz` Low Noise Figure:-0.6 dB @ 900 MHz-0.7 dB @ 1900 MHz-17 dBm P1dB at 2 GHz-33 dBm OIP3 at 2 GHz...

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SeekIC No. : 004312484 Detail

CDQ0303-QS: Features: ` Matched Pair of Transistors for Optimum` Balanced Amplifier Design` AlGaAs/InGaAs/AlGaAs Pseudomorphic High` Electron Mobility Transistor (pHEMT)` High Gain:-25 dB @ 900 MHz-21 dB @ 1900...

floor Price/Ceiling Price

Part Number:
CDQ0303-QS
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Description



Features:

` Matched Pair of Transistors for Optimum
` Balanced Amplifier Design
` AlGaAs/InGaAs/AlGaAs Pseudomorphic High
` Electron Mobility Transistor (pHEMT)
` High Gain:
-25 dB @ 900 MHz
-21 dB @ 1900 MHz
` Low Noise Figure:
-0.6 dB @ 900 MHz
-0.7 dB @ 1900 MHz
-17 dBm P1dB at 2 GHz
-33 dBm OIP3 at 2 GHz
` 600m Gate Width: 50 Output Impedance
` Excellent Uniformity
` Ultra Compact Surface-Mount QFN Package
` 10 Year MTBF Lifetime
` RoHS-Compliant Construction





Application

· Low Noise Amplifiers and Oscillators Operating over the RF and Microwave Frequency Ranges
· Cellular/PCS/GSM/W-CDMA
· Mobile Handsets, Base Station Receivers and Tower-Mount Amplifiers
· WiMAX WLAN, LEO, GEO, WLL/RLL, GPS and MMDS Applications
· General Purpose Discrete pHEMT for Other Ultra Low-Noise and Medium Power Applications





Pinout

  Connection Diagram




Specifications

Parameter Rating Parameter Rating Parameter Rating
Drain-Source Voltage 2 +5.5V Drain Current 2 Idss3 A Channel Temperature +175ºC
Gate-Source Voltage 2 -5.0V Total Pwr Dissipation 1.12W Storage Temperature -65ºC to +160ºC
Gate-Drain Voltage 2 -5.0V RF Input Power 17 dBm Thermal Resistance 70ºC/W
Notes:
1. Operation of this device above any one of these parameters may cause permanent damage
2. Assumes DC quiescent conditions. RF OFF.
3. Vgs=0V





Description

The CDQ0303-QS is a dual, ultra low-noise amplifier combining high gain, state-of-the-art noise figure and high IP3. Utilizing Mimix's distinctive in-house GaAs fabrication advantage and matched pair technology, co-located matched transistor die are assembled in the 4mm x 4mm QFN package. The low-cost, surface-mount, 16 terminal, plastic package is also lead-free.

Packaging a matched pair of ultra low-noise devices in a single package makes the CDQ0303-QS an ideal product for balanced amplifier implementation. It is intended for many applications operating in the 900 MHz to 2400 MHz frequency range. It can also be used in a dual-band configuration where a single transistor is used for each band.

Mimix's high performance packaged pHEMTs are ideal for use in all applications where low-noise figure, high gain, medium power and good intercept is required. The CDQ0303-QS is the perfect solution for the first or second stage of a base station LNA due to the excellent combination of low-noise figure and linearity. It is also well suited as a medium power driver stage in pole-top amplifiers and other transmit functions, particularly as the low thermal resistance allows extended power dissipation when voltage and current are adjusted for increased power and linearity.






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