Features: ·Electrically Isolated Heatsinking· DBC Alumina (Al2O3) Insulator·Glass Passivated Chips·Metal Baseplate·Low Thermal Impedance for Improved Current Capability·Quick Connect Gate Terminal with Provision for Keyed Mating Plug·UL Recognized (E78240)Application· Bridge Circuits· AC & DC ...
CD630815A: Features: ·Electrically Isolated Heatsinking· DBC Alumina (Al2O3) Insulator·Glass Passivated Chips·Metal Baseplate·Low Thermal Impedance for Improved Current Capability·Quick Connect Gate Terminal w...
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Characteristics | Conditions | Symbol | Units | |
Repetitive Peak Forward and Reverse Blocking Voltage |
VDRM & VRRM | up to 1600 | V | |
Non-Repetitive Peak Reverse Blocking Voltage (t < 5 msec) |
VRSM | VRRM + 100 | V | |
RMS Forward Current | 180onduction, TC=85 180onduction, TC=85 (AC Switch) |
IT(RMS) IT(RMS) |
250 355 |
A A |
Average Forward Current | 180onduction, TC=85 180onduction, TC=90 |
IT(AV) IT(AV) |
160 150 |
A A |
Peak One Cycle Surge Current, Non-Repetitive | 60 Hz, 100% VRRM reapplied, Tj=125 | ITSM | 4300 | A |
60 Hz, No VRRM reapplied, Tj=125 | ITSM | 5100 | A | |
50 Hz, 100% VRRM reapplied, Tj=125 | ITSM | 4100 | A | |
50 Hz, No VRRM reapplied, Tj=125 | ITSM | 4870 | A | |
Peak Three Cycle Surge Current, Non-Repetitive | 60 Hz, 100% VRRM reapplied, Tj=125 | ITSM | 3250 | A |
50 Hz, 100% VRRM reapplied, Tj=125 | ITSM | 3150 | A | |
Peak Ten Cycle Surge Current, Non-Repetitive | 60 Hz, 100% VRRM reapplied, Tj=125 | ITSM | 2650 | A |
50 Hz, 100% VRRM reapplied, Tj=125 | ITSM | 2550 | A | |
I2t for Fusing for One Cycle | 8.3 ms, 100% VRRM reapplied, Tj=125 | I2t | 76,700 | A2 sec |
8.3 ms, No VRRM reapplied, Tj=125 | I2t | 108,000 | A2 sec | |
10 ms, 100% VRRM reapplied, Tj=125 | I2t | 84,000 | A2 sec | |
10 ms, No VRRM reapplied, Tj=125 | I2t | 119,000 | A2 sec | |
Maximum Rate-of-Rise of On-State Current, Non Repetitive |
Tj=125, VD=1.0 VDRM (Rated), ITM=400A , |
di/dt | 300 | A/s |
IG=0.5 A, Tr < 0.25s, tp > 6s | ||||
Peak Gate Power Dissipation | Tp < 5 ms, Tj = 125 | PGM | 12 | W |
Average Gate Power Dissipation | F = 50 Hz, Tj = 125 | PG(AV) | 3 | W |
Peak Forward Gate Current | Tp < 5 ms, Tj = 125 | IGFM | 3 | A |
Peak Reverse Gate Voltage | Tp < 5 ms, Tj = 125 | VGRM | 10 | V |
Operating Temperature | TJ | -40 to +125 | ||
Storage Temperature | Tstg | -40 to +150 | ||
Max. Mounting Torque, M6 Mounting Screw on Terminals |
35 - 50 4 - 6 |
in.-Lb. Nm | ||
Max. Mounting Torque, Module to Heatsink | 35 - 50 4 - 6 |
in.-Lb. Nm | ||
Module Weight, Typical | 200 7.1 |
7.1 Oz. | ||
V Isolation @ 25C | Vrms | 3500 | V |