Features: • High Voltage Types (20V Rating)• CD4510BMS - BCD Type• CD4516BMS - Binary Type• Medium Speed Operation fCL = 8MHz Typ. at 10V• Synchronous Internal Carry Propagation• Reset and Preset Capability• 100% Tested for Quiescent Current at 20V• ...
CD4510BMS: Features: • High Voltage Types (20V Rating)• CD4510BMS - BCD Type• CD4516BMS - Binary Type• Medium Speed Operation fCL = 8MHz Typ. at 10V• Synchronous Internal Carry Pr...
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• High Voltage Types (20V Rating)
• CD4510BMS - BCD Type
• CD4516BMS - Binary Type
• Medium Speed Operation
fCL = 8MHz Typ. at 10V
• Synchronous Internal Carry Propagation
• Reset and Preset Capability
• 100% Tested for Quiescent Current at 20V
• 5V, 10V and 15V Parametric Ratings
• Standardized Symmetrical Output Characteristics
• Maximum Input Current of 1A at 18V Over Full Package Temperature Range; 100nA at 18V and +25oC
• Noise Margin (Over Full Package/Temperature Range)
1V at VDD = 5V
2V at VDD = 10V
2.5V at VDD = 15V
• Meets All Requirements of JEDEC Tentative Standard No. 13B, "Standard Specifications for Description of 'B' Series CMOS Devices"
•Up/Down Difference Counting
• Multistage Synchronous Counting
• Multistage Ripple Counting
• Synchronous Frequency Dividers
DC Supply Voltage Range, (VDD) .............0.5V to +20V (Voltage Referenced to VSS Terminals)
Input Voltage Range, All Inputs ................................................................. -0.5V to VDD +0.5V
DC Input Current, Any One Input....................................................................................±10mA
Operating Temperature Range ...............................-55oC to +125oC Package Types D, F, K, H
Storage Temperature Range (TSTG)............................................................... -65oC to +150oC
Lead Temperature (During Soldering) ...........................................................................+265oC
At Distance 1/16 ± 1/32 Inch (1.59mm ± 0.79mm) from case for 10s Maximum
Thermal Resistance...................................................................................................... ja, jc
Ceramic DIP and FRIT Package .....................................................................80oC/W ,20oC/W
Flatpack Package.......................................................................................... 70oC/W ,20oC/W
Maximum Package Power Dissipation (PD) at +125oC
For TA = -55oC to +100oC (Package Type D, F, K) .........................................................500mW
For TA = +100oC to +125oC (Package Type D, F, K)... Derate Linearity at 12mW/oC to 200mW
Device Dissipation per Output Transistor........................................................................100mW
For TA = Full Package Temperature Range (All Package Types)
Junction Temperature ......................................................................................................175oC