Features: Wide supply voltage range: 3.0V to 15VHigh noise immunity: 0.45 VDD (typ.)Low power TTL: fan out of 2 driving 74L compatibility: or 1 driving 74LSSerial to parallel capabilityStorage register capabilityRandom (addressable) data entryActive high demultiplexing capabilityCommon active high...
CD4099BC: Features: Wide supply voltage range: 3.0V to 15VHigh noise immunity: 0.45 VDD (typ.)Low power TTL: fan out of 2 driving 74L compatibility: or 1 driving 74LSSerial to parallel capabilityStorage regis...
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Wide supply voltage range: 3.0V to 15V
High noise immunity: 0.45 VDD (typ.)
Low power TTL: fan out of 2 driving 74L compatibility: or 1 driving 74LS
Serial to parallel capability
Storage register capability
Random (addressable) data entry
Active high demultiplexing capability
Common active high clear
Supply Voltage (VDD) ......................................................-0.5V to +18V
Input Voltage (VIN) ................................................-0.5V to VDD +0.5V
Storage Temperature Range (TS) ..............................-65 to +150
Power Dissipation (PD)
Dual-In-Line ............................................................................700 mW
Small Outline ..........................................................................500 mW
Lead Temp. (TL) (Soldering, 10 sec.).......................................... 260
The CD4099BC is an 8-bit addressable latch with three address inputs (A0A2), an active low enable input (E), active high clear input (CL), a data input (D), and eight outputs (Q0Q7).
CD4099BC Data is entered into a particular bit in the latch when that bit is addressed by the address inputs and the enable (E) is
LOW. Data entry is inhibited when enable (E) is HIGH.
When clear (CL) and enable (E) are HIGH, all CD4099BC outputs are LOW. When clear (CL) is HIGH and enable (E) is LOW, the channel demultiplexing occurs. The bit that is addressed has an active output which follows the data input while all unaddressed bits are held LOW. When operating in the addressable latch mode (E = CL = LOW), changing more than one bit of the address could impose a transient wrong address. Therefore, this should only be done while in the memory mode (E = HIGH, CL = LOW).