CD4002M

Features:

`Wide supply voltage range ..... .3.0V to 15V
`Low power ..............10 nW (typ.)
`High noise immunity ........0.45 V_DD (typ.)


Application

·Automotive
· Data terminals
·Instrumentation
·Medical Electronics
·Alarm system
·Industrial controls
·Remote metering
·Computers

Specifications

If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/Distributors for availability and specifications.
Voltage at Any Pin.....  V_SS b0.3V to V_DD a0.3V
Operating Temperature Range
CD4002M, CD4012M ...... ..-55 to +125
CD4002C, CD4012C ....... ..-40 to +85
Storage Temperature Range (T_S) ..-65 to +150
Power Dissipation (P_D)
Dual-In-Line ............... . 700 mW
Small Outline ............... .500 mW
Operating Range ...(V_DD) V_SS +3.0V to V_SS +15V
Lead Temperature (T_L)
(Soldering, 10 seconds) ............260


Description

These NOR and NAND gates are monolithic complementary MOS (CMOS) integrated circuits. The N- and P-channel enhancement mode transistors provide a symmetrical circuit with output swings essentially equal to the supply voltage. This results in high noise immunity over a wide supply voltage range. No DC power other than that caused by leakage current is consumed during static conditions. CD4002M All inputs are protected against static discharge and latching conditions.