Specifications SYMBOL UNITS Peak Repetitive Forward Current IFRM 250 mA Power Dissipation PD 350 mW Operating and Storage Junction Temperature TJ,Tstg -65 to +150 Thermal Resistance JA 357 /WDescriptionThe CENTRAL SEMICONDUCTOR CBAS17 type is a planar ep...
CBAS17: Specifications SYMBOL UNITS Peak Repetitive Forward Current IFRM 250 mA Power Dissipation PD 350 mW Operating and Storage Junction Temperature TJ,Tstg -65 to +150...
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SYMBOL | UNITS | ||
Peak Repetitive Forward Current | IFRM | 250 | mA |
Power Dissipation | PD | 350 | mW |
Operating and Storage | |||
Junction Temperature | TJ,Tstg | -65 to +150 | |
Thermal Resistance | JA | 357 | /W |