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CAT93 C86

Features: High speed operation: 3MHz Low power CMOS technology 1.8 to 6.0 volt operation Selectable x8 or x16 memory organization Self-timed write cycle with auto-clear Hardware and software write protection Power-up inadvertant write protection 1,000,000 Program/erase cycles 100 year data retenti...

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SeekIC No. : 004310786 Detail

CAT93 C86: Features: High speed operation: 3MHz Low power CMOS technology 1.8 to 6.0 volt operation Selectable x8 or x16 memory organization Self-timed write cycle with auto-clear Hardware and software write p...

CAT93 C86 Data Sheet

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Part Number:
CAT93 C86
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/12

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Product Details

Description



Features:

 High speed operation: 3MHz
Low power CMOS technology
1.8 to 6.0 volt operation
Selectable x8 or x16 memory organization
Self-timed write cycle with auto-clear
Hardware and software write protection
Power-up inadvertant write protection
1,000,000 Program/erase cycles
100 year data retention
Commercial, industrial and automotive
    temperature ranges
Sequential read
Program enable (PE) pin
"Green" package option available


Pinout

Connection Diagram


Specifications

Temperature Under Bias .................. -55°C to +125°C
Storage Temperature ........................ -65°C to +150°C
Voltage on any Pin with
Respect to Ground(1) ............. -2.0V to +VCC +2.0V
VCC with Respect to Ground ................ -2.0V to +7.0V
Package Power Dissipation
Capability (TA = 25°C) ................................... 1.0W
Lead Soldering Temperature (10 secs) ............ 300°C
Output Short Circuit Current(2) ........................ 100 mA


Description

The CAT93C86 is a 16K-bit Serial EEPROM memory device which is configured as either registers of 16 bits (ORG pin at VCC) or 8 bits (ORG pin at GND). Each
register can be written (or read) serially by using the DI (or DO) pin. The CAT93C86 is manufactured usingCatalyst's advanced CMOS EEPROM floating gate
technology. The device is designed to endure 1,000,000 program/erase cycles and has a data retention of 100 years. The device is available in 8-pin DIP, 8-pin SOIC, 8-pin TSSOP and 8-pad TDFN packages.




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