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DescriptionThe CA3019 consists of aixultra-fast, low capacitancediodes on a common monolithic subs...
Product Details
Quick Details
Transistor Polarity
:
NPN
Configuration
:
Quad
Description
Collector- Emitter Voltage VCEO Max
: Emitter- Base Voltage VEBO
: Maximum DC Collector Current
: DC Collector/Base Gain hfe Min
: Maximum Operating Frequency
: Maximum Operating Temperature
: Mounting Style
: Package / Case
: Packaging
: Transistor Polarity
: NPN Configuration
: Quad
Features:
• Two Matched Transistors - VBE Match . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±5mV - IIO Match. . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A (Max) • Low Noise Figure . . . . . . . . . . . . . . . . 3.2dB (Typ) at 1kHz • 5 General Purpose Monolithic Transistors • Operation From DC to 120MHz • Wide Operating Current Range • Full Military Temperature Range
Application
• Three Isolated Transistors and One Differentially Connected Transistor Pair for Low Power Applications at Frequencies from DC Through the VHF Range • Custom Designed Differential Amplifiers • Temperature Compensated Amplifiers • See Application Note, AN5296 "Application of the CA3018 Integrated-Circuit Transistor Array" for Suggested Applications