C167CR

Chip temperature under bias (T_D):SAF-C167xR-LC............. 40 to +85
SAK-C167xR-LC................................................................. 40 to +125
Storage temperature (TST).............................................. 65 to +150
Voltage on V_CC pads with respect to ground (V_SS) ......... 0.5 to +6.5 V
Voltage on any pad with respect to ground (V_SS)......0.5 to V_CC +0.5 V
Input current on any pad during overload condition....... 10 to +10 mA
Absolute sum of all input currents during overload condition.....|100 mA|
Note: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. During overload conditions (V_IN>V_CC or V_IN<V_SS) the voltage on pads with respect to ground (V_SS) must not exceed the values defined by the Absolute Maximum Ratings.

As the standard packaged devices C167CR are made from this silicon the C167xR-LC dies provide exactly the same functionality and behaviour. Also the DC characteristics and AC characteristics are compatible with those of the packaged devices.

For a description of the functionality and the DC and AC parameters please refer to the following documents (or later versions thereof):
` C167SR Data Sheet 06.95
` C167CR Data Sheet 06.95
` C167 Derivatives User's Manual Version 2.0