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Specifications SYMBOL C103Y C103YY C103A C103B UNITS Peak Repetitive Off-State Voltage VDRM, VRRM 30 60 100 200 V RMS On-State Current (TC=60°C) I T(RMS) 0.8 A Peak One Cycle Surge ITSM 8.0 A Peak Forward Gate Current IGM ...

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SeekIC No. : 004307930 Detail

C103B: Specifications SYMBOL C103Y C103YY C103A C103B UNITS Peak Repetitive Off-State Voltage VDRM, VRRM 30 60 100 200 V RMS On-State Current (TC=60°C) I ...

C103B Data Sheet

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Part Number:: C103B
Supply Ability:: 5000

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Upload time: 2024/11/23

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Description

Specifications

	SYMBOL	C103Y	C103YY	C103A	C103B	UNITS
Peak Repetitive Off-State Voltage	V_DRM, V_RRM	30	60	100	200	V
RMS On-State Current (TC=60°C)	I _T(RMS)	0.8				A
Peak One Cycle Surge	I_TSM	8.0				A
Peak Forward Gate Current	I_GM	0.5				A
Peak Reverse Gate Voltage	V_GM	8.0				V
Peak Gate Power Dissipation (tp=8.3ms)	P_GM	1.0				W
Average Gate Power Dissipation	P _G(AV)	0.01				W
Storage Temperature	T_stg	-65 to +150				°C
Junction Temperature	T_J	-65 to +125				°C

Description

The CENTRAL SEMICONDUCTOR C103 Series types are Epoxy Molded Silicon Controlled Rectifiers designed for control systems and sensing circuit applications.

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C103B

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