DescriptionThe BZW20 is a kind of transistor with integrated base emitter resistance and a Z diode in TO236 case. It is intended for use as control unit in various professional and industrial electronic circuit. It is particularly suitable for hybrid circuits in thick and thin film technology for ...
BZW20: DescriptionThe BZW20 is a kind of transistor with integrated base emitter resistance and a Z diode in TO236 case. It is intended for use as control unit in various professional and industrial electr...
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The BZW20 is a kind of transistor with integrated base emitter resistance and a Z diode in TO236 case. It is intended for use as control unit in various professional and industrial electronic circuit. It is particularly suitable for hybrid circuits in thick and thin film technology for the compact design of microelectronic circuits.
The following is about BZW20's maximum ratings: (1)collector-emitter voltage, VCEO: 20 V; (2)base-emitter voltage, VZE: 8.4 to 9.5 V; (3)collector current, IC: 100 mA; (4)base current, IZ: 10 mA; (5)storage temperature range, Tstg: -55 to +125; (6)junction temperature, Tj: 115; (7)total power dissipation (Tamb45), Ptot: 150 mW.
The last one is about BZW20's thermal resistance: (1)junction to ambient air if mounted on glass substrate (7*7*1 mm), RthJA: <700 K/W; (2)junction to ambient air if mounted on glass fiber substrate (30*12*1.5 mm), RthJA: <450 K/W; (3)junction to ambient air if mounted on ceramic substrate (30*12*1 mm), RthJA: <450 K/W.