BYW51-100

Features:

* Ultra Fast Recovery Time (<35ns)
* Low Forward Voltage
* Low Thermal Resistance
* Planar Design
* Wire-Bonded Construction


Application

* General Purpose
* Power Switching Circuits to 100kHz
* Full-Wave Rectification


Specifications

Maximum Peak Repetitive Reverse Voltage . . . . . . . . . . .V_RRM
Maximum Peak Surge Voltage. . . . . . . . . . . . . . . . . . . . . . V_RSM
Repetitive Peak Surge Current. . . . . . . . . . . . . . l_FRM , t_P< 10s
Nonrepetitive Peak Surge Current . . . . . . . . . . . . l _{F (RMS)} , Total
Average Rectified forward Current. . . . . . . . . . . . . . l _F(AV) , Total
T_C = +125, a = 0.5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Repetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . . . .l_FSM
tP= 10ms, Sinusoidal
Maximum Power Dissipation . . . . . . . . . . . . . .P_D , T_C= +125
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . .T_J
T_L (Lead Temperature During Soldering). . . . . . . . . . . . . . . . . . .
At Distance > 1/8  in. (3.17mm) From Case For 10s max.



Description

The BYW51 series devices are low forward voltage drop, ultra-fast-recovery rectifiers (t_RR< 35ns). They use a planar ion-implanted epitaxial construction.

BYW51-100 are intended for use as output rectifiers and fly-wheel diodes in a variety of high-frequency pulse-width-modulated and switching regulators. BYW51-100 low stored charge and attendant fast reverse-recovery behavior minimize electrical noise generation and in many circuits markedly reduce the turn-on dissipation of the associated power switching transistors.