Features: • Low forward volt drop• Fast switching• Soft recovery characteristic• Reverse surge capability• High thermal cycling performance• Low thermal resistancePinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRMVRWMVR...
BYV32EB: Features: • Low forward volt drop• Fast switching• Soft recovery characteristic• Reverse surge capability• High thermal cycling performance• Low thermal resistanc...
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SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT | ||
VRRM VRWM VR IO(AV) IFRM IFSM IRRM IRSM Tstg Tj |
Peaqk repetitive reverse voltage Crest working reverse voltage Continuous reverse voltage Average rectified output current (both diodes conducting) Repetitive peak forward current per diode Non-repetitive peak forward current per diode Repetitive peak reverse current per diode Non-repetitive peak reverse current per diode Storage temperature Operating junction temperature |
|
- - - - - - - - - -40 - |
-100 100 100 100 |
-150 150 150 150 |
-200 200 200 200 |
V V V A A A A °C °C |
20 20 125 137 0.2 0.2 150 150 |
Dual, ultra-fast, epitaxial rectifier BYV32EB diodes intended for use as output rectifiers in high frequency switched mode power
supplies.
The BYV32E series is supplied in the SOT78 conventional leaded package.
The BYV32EB series is supplied in the SOT404 surface mounting package.