DIODE FAST REC 1000V 25A TO220AC
BYT12PI-1000: DIODE FAST REC 1000V 25A TO220AC
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Features: *Multiple diffusion *Low switch on power losses *Good soft recovery behaviour *Fast forw...
Features: *Multiple diffusion *Epitaxial planar *Ultra fast forward recovery time *Ultra fast rev...
Series: | - | Manufacturer: | STMicroelectronics | ||
Diode Type: | Standard | Voltage - DC Reverse (Vr) (Max): | 1000V (1kV) | ||
Current - Average Rectified (Io): | 12A | Current - Average Rectified (Io) (per Diode): | - | ||
Voltage - Forward (Vf) (Max) @ If: | 1.9V @ 12A | Speed: | Fast Recovery = 200mA (Io) | ||
Reverse Recovery Time (trr): | 155ns | Drain Current (Idss at Vgs=0) : | 10 mA to 18 mA | ||
Current - Reverse Leakage @ Vr: | 50µA @ 1000V | Capacitance @ Vr, F: | - | ||
Diode Configuration: | - | Mounting Type: | Through Hole | ||
Package / Case: | TO-220-2 Insulated, TO-220AC | Supplier Device Package: | TO-220AC |
Symbol | Parameter |
Value |
Unit | |
VRRM VRSM IFRM IF (RMS) |
Repetitive Peak Reverse Voltage Non Repetitive Peak Reverse Voltage Repetitive Peak Forward Current tp 10s RMS Forward Current |
1000 1000 100 |
V V A | |
IF (RMS) IF (AV) IFSM |
RMS Forward Current Average Forward Current Surge Non Repetitive Forward Current |
Tc = 50°C = 0.5 tp = 10ms Sinusoidal |
25 12 75 25 - 40 to + 150 - 40 to + 150 |
A A A W °C |
P | Power Dissipation | Tc = 50°C | ||
Tstg Tj |
Storage and Junction Temperature Range |