Features: ·SOFT RECOVERY·VERY HIGH VOLTAGE·SMALL RECOVERY CHARGEApplication·ANTISATURATION DIODES FOR TRANSISTOR BASE DRIVE·SNUBBER DIODESSpecifications Symbol Parameter Value Unit IFRMIF (AV)IFSMPtot Repetive Peak Forward CurrentAverage Forward Current *Surge non Repetitiv...
BYT11-600: Features: ·SOFT RECOVERY·VERY HIGH VOLTAGE·SMALL RECOVERY CHARGEApplication·ANTISATURATION DIODES FOR TRANSISTOR BASE DRIVE·SNUBBER DIODESSpecifications Symbol Parameter Value Unit...
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Features: *Multiple diffusion *Low switch on power losses *Good soft recovery behaviour *Fast forw...
Features: *Multiple diffusion *Epitaxial planar *Ultra fast forward recovery time *Ultra fast rev...
Features: *Multiple diffusion *Epitaxial planar *Ultra fast forward recovery time *Ultra fast rev...
Symbol |
Parameter |
Value |
Unit | |
IFRM IF (AV) IFSM Ptot |
Repetive Peak Forward Current Average Forward Current * Surge non Repetitive Forward Current Power Dissipation * |
tp 20s Tc = 50°C = 0.5 tp = 10ms Sinusoidal Ta = 50°C |
20 1 35 1.25 |
A A A W |
Tstg Tj TL |
Storage and Junction Temperature Range Maximum Lead Temperature for Soldering during 10s at 4mm from Case |
- 55 to + 150 - 55 to + 150 230 |
°C °C |