Features: *N channel*Enhancement mode*Avalanche-ratedPinoutSpecifications Parameter Symbol Values Unit Continuous drain current T=28 ID 3 A Pulsed drain current T=25 Idpuls 12 Avalanche current,limited by Tjmax Iar 3 MJ Avalanche energy,periodic limited by T...
BUZ 76: Features: *N channel*Enhancement mode*Avalanche-ratedPinoutSpecifications Parameter Symbol Values Unit Continuous drain current T=28 ID 3 A Pulsed drain current T=25 Idpu...
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Parameter | Symbol | Values | Unit |
Continuous drain current T=28 | ID | 3 | A |
Pulsed drain current T=25 | Idpuls | 12 | |
Avalanche current,limited by Tjmax | Iar | 3 | MJ |
Avalanche energy,periodic limited by Tjmax | Ear | 5 | |
Avalanche energy, single pulse | Eas | ||
Id= 41 A, Vdd= 25 V, Rgs= 25 | |||
L = 249.9 H, Tj = 25 °C | 180 | ||
Gate source voltage | Vgs | ±20 | V |
Power dissipation T=25 | Ptot | 40 | W |
Operating temperature | Tj | 55 ... + 150 | C |
Storage temperature | Tstg | 55 ... + 150 | |
Thermal resistance, chip case | RthJC | 3.1 | K/W |
Thermal resistance, chip to ambient | RthJA | 75 | |
DIN humidity category, DIN 40 040 | E | ||
IEC climatic category, DIN IEC 68-1 | 55/150/56 | ||