BUZ80A

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Gate Charge (Qg) @ Vgs: -
Current - Continuous Drain (Id) @ 25° C: 3.6A
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3
Drain to Source Voltage (Vdss): 800V
Vgs(th) (Max) @ Id: 4V @ 1mA
Power - Max: 100W
Input Capacitance (Ciss) @ Vds: 1350pF @ 25V
Rds On (Max) @ Id, Vgs: 3 Ohm @ 2A, 10V
Series: SIPMOS®
Manufacturer: Infineon Technologies
Supplier Device Package: PG-TO220-3


Features:

• N channel
• Enhancement mode


Specifications

Parameter	Symbol	Values	Unit
Drain source voltage	VDS	800	V
Drain-gate voltage RGS = 20 k	VDGR	800
Continuous drain current TC = 50	ID	3	A
Pulsed drain current TC = 25	IDpuls	12
Gate source voltage	VGS	± 20	V
Power dissipation TC = 25	Ptot	75	W
Operating temperature	Tj	-55 ... + 150
Storage temperature	Tstg	-55 ... + 150
Thermal resistance, chip case	RthJC	1.67	K/W
Thermal resistance, chip to ambient	RthJC	75
DIN humidity category, DIN 40 040		E
IEC climatic category, DIN IEC 68-1		55 / 150 / 56

 

Parameters:

Technical/Catalog Information	BUZ80A
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25° C	3.6A
Rds On (Max) @ Id, Vgs	3 Ohm @ 2A, 10V
Input Capacitance (Ciss) @ Vds	1350pF @ 25V
Power - Max	100W
Packaging	Tube
Gate Charge (Qg) @ Vgs	-
Package / Case	TO-220AB
FET Feature	Standard
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	BUZ80A BUZ80A BUZ80AIN ND BUZ80AINND BUZ80AIN