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BUZ342

Specifications Parameter Symbol Values Unit Continuous drain current TC = 23 °C ID 60 A Pulsed drain currentTC = 25 °C IDpuls 240 Avalanche energy, single pulseID = 40 A, VDD = 25 V, RGS = 25 ΩL = 63 µH, Tj= 25 °C EAS 460 mJ Reverse diode dv/dtIS = 40 A, V...

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BUZ342: Specifications Parameter Symbol Values Unit Continuous drain current TC = 23 °C ID 60 A Pulsed drain currentTC = 25 °C IDpuls 240 Avalanche energy, single pulseID = 40 A, VDD ...

BUZ342 Data Sheet

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Part Number:
BUZ342
Supply Ability:
5000

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Specifications

Parameter Symbol Values Unit
Continuous drain current
TC = 23 °C		 ID
60 		A
Pulsed drain current
TC = 25 °C		 IDpuls
240
Avalanche energy, single pulse
ID = 40 A, VDD = 25 V, RGS = 25 Ω
L = 63 µH, Tj= 25 °C		 EAS

460 		mJ
Reverse diode dv/dt
IS = 40 A, VDS = 40 V, diF/dt = 200 A/µs
Tjmax = 175 °C		 dv/dt

kV/µs
Gate source voltage VGS ± 20 V
Power dissipation
TC = 25 °C		 Ptot
400 		W
Operating temperature Tj -55 ... + 175 °C
Storage temperature Tstg -55 ... + 175
Thermal resistance, chip case RthJC 0.37 K/W
Thermal resistance, chip to ambient RthJA 75
DIN humidity category, DIN 40 040   E  
IEC climatic category, DIN IEC 68-1   55 / 175 / 56



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