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BUZ341

Features: • N channel• Enhancement mode• Avalanche-ratedSpecifications Parameter Symbol Values Unit Continuous drain currentTC =28 ID 33 A Pulsed drain currentTC = 25 IDpuls 132 Avalanche current,limited by Tjmax IAR 33 Avalanche energy,periodic limite...

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BUZ341: Features: • N channel• Enhancement mode• Avalanche-ratedSpecifications Parameter Symbol Values Unit Continuous drain currentTC =28 ID 33 A Pulsed drain currentTC =...

BUZ341 Data Sheet

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Part Number:
BUZ341
Supply Ability:
5000

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  • 1~5000
  • Unit Price
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• N channel
• Enhancement mode
• Avalanche-rated


Specifications

Parameter Symbol Values Unit
Continuous drain current
TC =28
 ID 33 A
Pulsed drain current
TC = 25 		IDpuls 132
Avalanche current,limited by Tjmax IAR 33
Avalanche energy,periodic limited by Tjmax
 EAR

16

 mJ

Avalanche energy, single pulse
ID =33A, VDD = 50 V, RGS = 25
L =1.09mH, Tj = 25

EAS 790
Gate source voltage VGS ± 20 V
Power dissipation
TC = 25		 Ptot 170 W
Operating temperature Tj -55 ... + 150
Storage temperature Tstg -55 ... + 150
Thermal resistance, chip case RthJC 0.74 K/W
Thermal resistance, chip to ambient RthJA 75
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55 / 150 / 56



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