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BUZ32

MOSFET N-CH 200V 9.5A

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SeekIC No. : 00151867 Detail

BUZ32: MOSFET N-CH 200V 9.5A

BUZ32 Data Sheet

floor Price/Ceiling Price

US $ .59~1.06 / Piece | Get Latest Price
Part Number:
BUZ32
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~500
  • Unit Price
  • $1.06
  • $.95
  • $.76
  • $.59
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/30

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 9.5 A
Resistance Drain-Source RDS (on) : 0.4 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 200 V
Continuous Drain Current : 9.5 A
Resistance Drain-Source RDS (on) : 0.4 Ohms


Features:

• 9.5A, 200V
• rDS(ON) = 0.400
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"


Specifications

BUZ32 UNITS
Drain to Source Breakdown Voltage (Note 1) VDS 200 V
Drain to Gate Voltage (RGS = 20k) (Note 1) VDGR 200 V
Continuous Drain Current, TC = 55 ID 9.5 A
Pulsed Drain Current (Note 3) IDM 38 A
Gate to Source Voltage VGS ±20 V
Maximum Power Dissipation PD 75 W
Linear Derating Factor 0.6 W/
Operating and Storage Temperature TSTG, TJ -55 to 150
DIN Humidity Category - DIN 40040 E
IEC Climatic Category - DIN IEC 68-1 55/150/56
Leads at 0.063in (1.6mm) from Case for 10s TL 300
Package Body for 10s, See Techbrief 334 Tpkg 260

CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.




Parameters:

Technical/Catalog InformationBUZ32
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C9.5A
Rds On (Max) @ Id, Vgs400 mOhm @ 6A, 10V
Input Capacitance (Ciss) @ Vds 530pF @ 25V
Power - Max75W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs-
Package / CaseTO-220AB
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names BUZ32
BUZ32
BUZ32IN ND
BUZ32INND
BUZ32IN



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