Features: • N channel• Enhancement modeSpecifications Parameter Symbol Values Unit Drain source voltage VDS 1000 V Drain-gate currentRGS = 25 VDGR 1000 Continuous drain currentTC = 25 ID 2.5 A Pulsed drain currentTC = 25 IDpuls 10 Gate source voltage ...
BUZ311: Features: • N channel• Enhancement modeSpecifications Parameter Symbol Values Unit Drain source voltage VDS 1000 V Drain-gate currentRGS = 25 VDGR 1000 Continuous d...
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Parameter | Symbol | Values | Unit |
Drain source voltage |
VDS | 1000 | V |
Drain-gate current RGS = 25 |
VDGR | 1000 | |
Continuous drain current TC = 25 |
ID | 2.5 | A |
Pulsed drain current TC = 25 |
IDpuls |
10 | |
Gate source voltage | VGS | ± 20 | V |
Power dissipation TC = 25 |
Ptot | 78 | W |
Operating temperature | Tj | -55 ... + 150 | |
Storage temperature | Tstg | -55 ... + 150 | |
Thermal resistance, chip case | RthJC | 1.6 | K/W |
Thermal resistance, chip to ambient | RthJA | 75 | |
DIN humidity category, DIN 40 040 | C | ||
IEC climatic category, DIN IEC 68-1 | 55 / 150 / 56 |