MOSFET N-CH 200V 14.5A
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 200 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 14.5 A | ||
Resistance Drain-Source RDS (on) : | 0.2 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220 | Packaging : | Tube |
Parameter | Symbol | Values | Unit |
Continuous drain current TC =30 |
ID | 14.5 | A |
Pulsed drain current TC = 25 |
IDpuls | 58 | |
Avalanche current,limited by Tjmax | IAR | 14.5 | |
Avalanche energy,periodic limited by Tjmax |
EAR |
9 |
mJ |
Avalanche energy, single pulse |
EAS | 200 | |
Gate source voltage | VGS | ± 20 | V |
Power dissipation TC = 25 |
Ptot | 95 | W |
Operating temperature | Tj | -55 ... + 150 | |
Storage temperature | Tstg | -55 ... + 150 | |
Thermal resistance, chip case | RthJC | 1.32 | K/W |
Thermal resistance, chip to ambient | RthJA | 75 | |
DIN humidity category, DIN 40 040 | E | ||
IEC climatic category, DIN IEC 68-1 | 55 / 150 / 56 |
Technical/Catalog Information | BUZ31 |
Vendor | Infineon Technologies |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25° C | 14.5A |
Rds On (Max) @ Id, Vgs | 200 mOhm @ 9A, 5V |
Input Capacitance (Ciss) @ Vds | 1120pF @ 25V |
Power - Max | 95W |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | - |
Package / Case | TO-220AB |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | BUZ31 BUZ31 BUZ31IN ND BUZ31INND BUZ31IN |