Position: Home  > All Categories> Integrated Circuits (ICs) > BUZ30A

BUZ30A

MOSFET N-CH 200V 21A

product image

BUZ30A Picture
See larger image
SeekIC No. : 00161178 Detail

BUZ30A: MOSFET N-CH 200V 21A

BUZ30A Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
BUZ30A
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/21

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 21 A
Resistance Drain-Source RDS (on) : 0.13 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 200 V
Package / Case : TO-220
Continuous Drain Current : 21 A
Resistance Drain-Source RDS (on) : 0.13 Ohms


Features:

• N channel
• Enhancement mode
• Avalanche-rated


Specifications

Parameter Symbol Values Unit
Continuous drain current
TC =26
 ID 21 A
Pulsed drain current
TC = 25 		IDpuls 84
Avalanche current,limited by Tjmax IAR 21
Avalanche energy,periodic limited by Tjmax
 EAR

12

 mJ

Avalanche energy, single pulse
ID =21A, VDD = 50 V, RGS = 25
L =1.53mH, Tj = 25

EAS 450
Gate source voltage VGS ± 20 V
Power dissipation
TC = 25		 Ptot 125 W
Operating temperature Tj -55 ... + 150
Storage temperature Tstg -55 ... + 150
Thermal resistance, chip case RthJC 1 K/W
Thermal resistance, chip to ambient RthJA 75
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55 / 150 / 56



Parameters:

Technical/Catalog InformationBUZ30A
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C21A
Rds On (Max) @ Id, Vgs130 mOhm @ 13.5A, 10V
Input Capacitance (Ciss) @ Vds 1900pF @ 25V
Power - Max125W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs-
Package / CaseTO-220AB
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names BUZ30A
BUZ30A
BUZ30AIN ND
BUZ30AINND
BUZ30AIN



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Sensors, Transducers
GP2Y0D340K
PAN3509DH-TXWA
Resistors
A101G
3006P-1-205LF
Capacitors
GRM188R71H103KA01D
GRM21BR71H104KA01L
Test Equipment
TOP853
TOP2005
Switches
US32DMRJ
HBGQ22P-11ET
Cables, Wires - Management
NM-SF50+
CCK26.5-MM-190-30
View more