Transistors Bipolar (BJT) 2A 450V 50W NPN
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 450 V |
Emitter- Base Voltage VEBO : | 5 V | Maximum DC Collector Current : | 2 A |
DC Collector/Base Gain hfe Min : | 30 | Configuration : | Single |
Maximum Operating Frequency : | 4 MHz (Min) | Maximum Operating Temperature : | + 150 C |
Mounting Style : | Through Hole | Package / Case : | TO-220AB |
Packaging : | Tube |
Rating | Symbol | BUX84 | BUX85 | Unit |
CollectorEmitter Voltage | VCEO(sus) | 400 | 450 | Vdc |
CollectorEmitter Voltage | VCES | 800 | 1000 | Vdc |
EmitterBase Voltage | VEBO | 5 | 5 | Vdc |
Collector Current - Continuous - Peak (1) |
IC ICM |
2 3.0 |
2 3.0 |
mAdc |
Base Current - Continuous - Peak (1) |
IB IBM |
0.75 1.0 |
0.75 1.0 |
Watts W/ |
Reverse Base Current - Peak | IBM | 1 | 1 | |
Total Device Dissipation @ TC = 25°CDerate above 25°C | PD | 50 400 |
50 400 |
Watts mW/°C |
Operating and Storage Junction Temperature Range |
TJ, Tstg | 65 to +150 | 65 to +150 |
Technical/Catalog Information | BUX85 |
Vendor | ON Semiconductor |
Category | Discrete Semiconductor Products |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 450V |
Current - Collector (Ic) (Max) | 2A |
Power - Max | 50W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 100mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 800mV @ 30mA, 300mA |
Frequency - Transition | 4MHz |
Current - Collector Cutoff (Max) | 200A |
Mounting Type | Through Hole |
Package / Case | TO-220-3 (Straight Leads) |
Packaging | Tube |
Lead Free Status | Contains Lead |
RoHS Status | RoHS Non-Compliant |
Other Names | BUX85 BUX85 BUX85OS ND BUX85OSND BUX85OS |