BUX47

The BUX47 is silicon multiepitaxial mesa NPN transistor mounted respectively in TO-3 metal case,TO-218 plastic package and ISOWATT218 fully isolated package. They are inteded for high voltage, fast switching applications.

There are some absolute maximum ratings about BUX47.Collector-emitter voltage(VCER) is 850 V when RBE is 10 ohm. Collector-emitter voltage(VCES) is 850 V when VBE is 0.Collector-emitter voltage(VCEO) is 400 V when IB is 0. Emitter-base voltage(VEBO) is 7 V when Ic is 0.Collector current(Ic) is 9 A. Collector peak current(ICM) is 15 A when tp is less than 5 ms. Base current(IB) is 8 A.Base peak current(IBM) is 10 A when tp is less than 5 ms.Otherwise, there are also some electrical characteristics about it when Tcase is 25 unless otherwise specified.Collector cutoff current(ICER) is 0.4 mA max when VCE is 850 V,RBE is 10 ohm. Collector cutoff current(ICEV) is 0.15 mA max when VCE is 850 V and VBE is -2.5 V. emitter cutoff current(IEBO) is 1 mA max when VEB is 5 V and Ici s 0. Emitter-base voltage(VEBO) is 7 V min and 30 V max when IE is 50 mA and Ic is 0.

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