Features: • Fast Turn-On Time 1s @ IC = 15A• High Current CapabilityApplicationThe BUX39 is an epitaxial silicon NPN planar transistor that has high current and high power handling capability and high switching speed.This device is especially suitable for switchingcontrol amplifiers, ...
BUX39: Features: • Fast Turn-On Time 1s @ IC = 15A• High Current CapabilityApplicationThe BUX39 is an epitaxial silicon NPN planar transistor that has high current and high power handling capa...
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The BUX39 is an epitaxial silicon NPN planar transistor that has high current and high power handling capability and high switching speed.
This device is especially suitable for switchingcontrol amplifiers, power gates, switching regulators, powerswitching circuits converters, inverters and control circuits.
Other recommended applications include DCRF amplifiers and power oscillators.
VCBO | Collector Base Voltage | 120V |
VCEX | Collector Emitter Sustaining Voltage @ VBE = 1.5V | 120V |
VCER | Collector Emitter Voltage @ RBE = 100W | 110V |
VCEO(sus) | Collector Emitter Sustaining Voltage | 90V |
VEBO | Emitter Base Voltage | 7V |
IC | Collector Current | 30A |
ICM | Peak Collector Current | 40A |
IB | Base Current | 6A |
Ptot | Total Power Dissipation Derate above 25 |
120W 0.68 W / |
Tstg, Tj | Maximum Junction and Storage Temperature Range | 65 to 100 |
TL | Lead Temperature 1/32 inch (0.8 mm) for 10 sec. max. | 230 |