Transistors Bipolar (BJT) NPN Fast Sw Power
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 450 V |
Emitter- Base Voltage VEBO : | 7 V | Maximum DC Collector Current : | 45 A |
Configuration : | Single | Maximum Operating Temperature : | + 200 C |
Mounting Style : | Through Hole | Package / Case : | TO-3 |
Packaging : | Tube |
Symbol | Parameter | Value | Unit |
VCEV | Collector-Emitter Voltage (VBE = -1.5 V) | 850 | V |
VCEO | Collector-Emitter Voltage (IB = 0) | 450 | V |
VEBO | Emitter-Base Voltage (IC = 0) | 7 | V |
IC | Collector Current | 45 | A |
ICM | Collector Peak Current | 60 | A |
IB | Base Current | 9 | A |
IBM | Base Peak Current (tp < 5 ms) | 15 | A |
Ptot | Total Power Dissipation at Tcase 25 | 300 | W |
Tstg | Storage Temperature | -65 to 200 | |
Tj | Junction Temperature | 200 |