Specifications VCBO Collector Base Voltage(IE = 0) 160V VCEX Collector Emitter Voltage (VBE = 1.5V) 160V VCER Collector Emitter Voltage (IB = 0) 125V VEBO Emitter Base Voltage 7V IC Collector Current 50A ICM Collector Peak Current(tp = 10 ms) 60A IB Base Cur...
BUX20: Specifications VCBO Collector Base Voltage(IE = 0) 160V VCEX Collector Emitter Voltage (VBE = 1.5V) 160V VCER Collector Emitter Voltage (IB = 0) 125V VEBO Emitter Base Volta...
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VCBO | Collector Base Voltage(IE = 0) | 160V |
VCEX | Collector Emitter Voltage (VBE = 1.5V) | 160V |
VCER | Collector Emitter Voltage (IB = 0) | 125V |
VEBO | Emitter Base Voltage | 7V |
IC | Collector Current | 50A |
ICM | Collector Peak Current(tp = 10 ms) | 60A |
IB | Base Current | 10A |
Ptot | Total Power Dissipation at Tcase 25 | 350W |
Tstg | Maximum Junction and Storage Temperature Range | 65 to 200 |
Tj | Junction Temperature | 200 |
The BUX20 is a silcon multiepitaxial planar NPN transistor in modified Jedec TO-3 metal case, intended for use in switching and linear applications in military and industrial equipment.