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BUW14

Specifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0 - 1000 V VCEO Collector-emitter voltage (open base) - 450 V IC collector current (DC) - 0.5 A ICM collector current peak value - 1 A IB base...

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BUW14: Specifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0 - 1000 V VCEO Collector-emitter voltage (open base) - 450 V ...

BUW14 Data Sheet

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Part Number:
BUW14
Supply Ability:
5000

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Upload time: 2024/12/25

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Product Details

Description



Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCESM Collector-emitter voltage peak value VBE = 0 -
1000		 V
VCEO Collector-emitter voltage (open base)   -
 450 V
IC collector current (DC)   - 0.5 A
ICM collector current peak value   - 1 A
IB base current (DC) - 0.2 A
IBM base current (peak value) - 0.3 A
IBM Reverse base current peak value 1   - 0.3 A
Ptot total power dissipation Tmb 60 - 20 W
Tstg storage temperature -65 150
Tj junction temperature - 150
 



Description

High-voltage, high-speed, glass passivated npn power transistor BUW14 in a SOT82 envelope intended for use in converters, inverters, switching regulators, motor control systems and switching applications.




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