Application· Converters· Inverters· Switching regulators· Motor control systems.Specifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCESM Collector-emitter voltage peak valueBUW13FBUW12AF VBE = 0 -- 8501000 VV VCEO Collector-emitter voltage BUW13FBUW13AF open base -- ...
BUW13W: Application· Converters· Inverters· Switching regulators· Motor control systems.Specifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCESM Collector-emitter voltage peak valueBUW1...
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SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VCESM | Collector-emitter voltage peak value BUW13F BUW12AF |
VBE = 0 | - - |
850 1000 |
V V |
VCEO | Collector-emitter voltage BUW13F BUW13AF |
open base | - - |
400 450 |
V V |
IC | base current (DC) | see Figs 2 and 4 | - | 15 | A |
ICM | base current (peak value) | tp < 20 ms; see Fig2 | - | 30 | A |
IB | base current (DC) | - | 6 | A | |
IBM | base current (peak value) | tp 2 ms | - | 9 | A |
Ptot | total power dissipation | Tmb 25 ; see Fig3 | - | 175 | W |
Tstg | storage temperature | -65 | +150 | ||
Tj | junction temperature | - | 150 |
High-voltage, high-speed, glass-passivated NPN power transistor BUW13W in a SOT429 package.