Application· Converters· Inverters· Switching regulators· Motor control systems.Specifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCESM Collector-emitter voltage peak valueBUW11FBUW11AF VBE = 0 - 8501000 VV VCEO Collector-emitter voltage BUW11FBUW11AF open base - 4...
BUW11F: Application· Converters· Inverters· Switching regulators· Motor control systems.Specifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCESM Collector-emitter voltage peak valueBUW1...
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SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VCESM | Collector-emitter voltage peak value BUW11F BUW11AF |
VBE = 0 | - |
850 1000 |
V V |
VCEO | Collector-emitter voltage BUW11F BUW11AF |
open base | - |
400 450 |
V V |
VCEsat | collector-emitter saturation voltage | - | 1.5 | V | |
ICsat | collector saturation current BUW11F BUW11AF |
- | 3 2.5 |
A A | |
IC | base current (DC) | see Figs 2 and 4 | - | 5 | A |
ICM | base current (peak value) | tp < 20 ms; see Fig.2 | - | 10 | A |
Ptot | total power dissipation | Th 25 °C; see Fig.3 | - | 32 | W |
tf | fall time | resistive load; see Figs 8 and 9 | - | 0.8 | s |
High-voltage, high-speed, glass-passivated NPN power transistor BUW11F in a SOT199 package.