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BUV98AV

Transistors Bipolar (BJT) NPN Power Module

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SeekIC No. : 00211777 Detail

BUV98AV: Transistors Bipolar (BJT) NPN Power Module

BUV98AV Data Sheet

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Part Number:
BUV98AV
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/9/27

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 1000 V
Emitter- Base Voltage VEBO : 7 V Maximum DC Collector Current : 30 A
DC Collector/Base Gain hfe Min : 9 Mounting Style : Through Hole
Package / Case : ISOTOP Packaging : Tube    

Description

Configuration :
Maximum Operating Frequency :
Maximum Operating Temperature :
Transistor Polarity : NPN
Mounting Style : Through Hole
Packaging : Tube
Emitter- Base Voltage VEBO : 7 V
Maximum DC Collector Current : 30 A
DC Collector/Base Gain hfe Min : 9
Collector- Emitter Voltage VCEO Max : 1000 V
Package / Case : ISOTOP


Features:

· HIGH CURRENTPOWER BIPOLAR MODULE
· VERY LOW Rth JUNCTION CASE
· SPECIFIED ACCIDENTAL OVERLOAD AREAS
· ISOLATED CASE (2500V RMS)
· EASY TO MOUNT
· LOW INTERNAL PARASITIC INDUCTANCE


Application

· MOTOR CONTROL
·SMPS & UPS
·WELDING EQUIPMENT


Specifications

Symbol Parameter Value Unit
VCEV Collector-Emitter Voltage (VBE = -5 V) 1000 V
VCEO(sus) Collector-Emitter Voltage (IB = 0) 450 V
VEBO Emitter-Base Voltage (IC = 0) 7 V
IC Collector Current 30 A
ICM Collector Peak Current (tp = 10 ms) 60 A
IB Base Current 8 A
IBM Base Peak Current (tp = 10 ms) 16 A
Ptot Total Dissipation at Tc = 25 oC 150 W
Tstg Storage Temperature -55 to 150
Tj Max. Operating Junction Temperature 150
VISO Insulation Withstand Voltage (AC-RMS) 2500



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