BUV61

Transistors Bipolar (BJT) Hi Pwr NPN Silicon Transistor

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BUV61 Picture
SeekIC No. : 00211922 Detail

BUV61: Transistors Bipolar (BJT) Hi Pwr NPN Silicon Transistor

floor Price/Ceiling Price

Part Number:
BUV61
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Month Sales

268 Transactions

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evaluate  (4.8 stars)

Upload time: 2024/11/24

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 200 V
Emitter- Base Voltage VEBO : 7 V Maximum DC Collector Current : 50 A
Configuration : Single Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-3    

Description

Maximum Operating Frequency :
DC Collector/Base Gain hfe Min :
Packaging :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 7 V
Package / Case : TO-3
Collector- Emitter Voltage VCEO Max : 200 V
Maximum DC Collector Current : 50 A


Features:

*NPN TRANSISTOR
*HIGH CURRENT CAPABILITY
*FAST SWITCHING SPEED
*FULLY CHARACTERIZED AT 125



Application

*SWITCHING REGULATORS 
*MOTOR CONTROL



Specifications

 Symbol  Parameter  Value  Unit
 VCEV  Collector-Emitter Voltage (VBE=-1.5V)  300  V
 VCEO  Collector-Emitter Voltage (IB=0)  200  V
 VEBO  Emitter-Base Voltage (IC=0)  7  V
 IC  Collector Current  50  A
 ICM  Collector Peak Current  75  A
 IB  Base Current  8  A
 IBM  Base Peak Current  15  A
 PBase  Reverse Bias Base Dissipation  2  W
 Ptot  Total Dissipation at TC<25  250  W
 Tstg  Storage Temperature  -65 to +200  
 TJ  Max Operating Junction Temperature  200  



Description

The BUV61 is a Multi-Epitaxial planar NPN transistor in TO-3 metal case.

BUV61 is intented for use in high frequency  and efficiency converters such us motor controllers and industrial equipment.


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