BUV48AFI

Maximum Operating Frequency :
DC Collector/Base Gain hfe Min :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Tube
Emitter- Base Voltage VEBO : 7 V
Maximum DC Collector Current : 15 A
Package / Case : SOT-93
Collector- Emitter Voltage VCEO Max : 450 V


Features:

*STMicroelectronics PREFERRED SALESTYPES
*NPN TRANSISTOR
*HIGH VOLTAGE CAPABILITY
*HIGH CURRENT CAPABILITY
*FAST SWITCHING SPEED




Application

*SWITCH MODE POWER SUPPLIES
*FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS




Specifications

Symbol	Parameter	Value			Unit
		BUX48		BUX48A BUV48A BUV48AFI
VCER	Collector-Emitter Voltage(RBE=10)	850		1000	V
VCES	Collector-Emitter Voltage(VBE=0)	850		1000	V
VCEO	Collector-Emitter Voltage(IB=0)	400		450	V
VEBO	Emitter-Base Voltage(IC=0)	7			V
IC	Collector Current	15			A
ICM	Collector Peak Current	30			A
ICP	Collector Peak Current non repetitive(tp<20s)	55			A
IB	Base Current	4			A
IBM	Base Peak Current	20			A
		TO-3	TO-218	ISOWATT218
Ptot	Total Dissipation at TC=25	175	125	55	W
Tstg	Storage Temperature	-65 to 200	-65 to 150	-65 to 150
Tj	Max.Operating Junction Temperature	200	150	150

Description

The BUX48/A, BUV48A and BUV48AFI are silicon Multiepitaxial Mesa NPN transistors mounted respectively in TO-3 metal case, TO-218 plastic package and ISOWATT218 fully isolated package. They are particulary intended for switching and industrial applications from single and tree-phase mains.