Transistors Bipolar (BJT) NPN Hi-Curr High Spd
BUTW92: Transistors Bipolar (BJT) NPN Hi-Curr High Spd
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 250 V |
Emitter- Base Voltage VEBO : | 7 V | DC Collector/Base Gain hfe Min : | 9 |
Configuration : | Single | Maximum Operating Temperature : | + 150 C |
Mounting Style : | Through Hole | Package / Case : | TO-247 |
Packaging : | Tube |
Symbol | Parameter | Value | Unit |
VCES | Collector-Emitter Voltage (VBE= -1.5V) | 500 | V |
VCEO | Collector-Emitter Voltage (IB= 0) |
250 | V |
VEBO | Emitter-Base Voltage (IC = 0) | 7 | V |
IE | Emitter Current | 60 | A |
IEM | Emitter Peak Current(tp<5ms) | 70 | A |
IB | Base Current | 15 | A |
IBM | Base Peak Current (tp<5ms) | 18 | A |
Ptot |
Total Dissipation at TC25 |
180 | W |
Tstg | Storage Temperature | -65 to 150 | |
Tj | Max. Operating Junction Temperature | 150 |