Transistors Bipolar (BJT) NPN High Power
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 125 V | ||
Emitter- Base Voltage VEBO : | 7 V | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-247 | Packaging : | Tube |
Symbol |
Parameter |
Value |
Unit |
VCEV |
Collector-Emitter Voltage (VBE = -1.5V) |
200 |
V |
VCEO |
Collector-Emitter Voltage (IB = 0) |
125 |
V |
VEBO |
Emitter-Base Voltage (IC = 0) |
7 |
V |
IE(RMS) |
Emitter Current |
40 |
A |
IEM |
Emitter Peak Current |
120 |
A |
IB |
Base Current |
8 |
A |
IBM |
Base Peak Current |
24 |
A |
Ptot |
Total Power Dissipation at Tcase < 25 oC |
200 |
W |
Tstg |
Storage Temperature |
-65 to 150 |
|
Tj |
Max. Operating Junction Temperature |
150 |
The BUT70W is a Multiepitaxial planar NPN transistor in TO-247 plastic package.
BUT70W is intented for use in high frequency and efficiency converters such us motor controllers and industrial equipment.