BUT70W

Transistors Bipolar (BJT) NPN High Power

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BUT70W Picture
SeekIC No. : 00206840 Detail

BUT70W: Transistors Bipolar (BJT) NPN High Power

floor Price/Ceiling Price

US $ 4.88~6.93 / Piece | Get Latest Price
Part Number:
BUT70W
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $6.93
  • $5.83
  • $5.35
  • $4.88
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 125 V
Emitter- Base Voltage VEBO : 7 V Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-247 Packaging : Tube    

Description

Maximum DC Collector Current :
DC Collector/Base Gain hfe Min :
Maximum Operating Frequency :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Packaging : Tube
Emitter- Base Voltage VEBO : 7 V
Package / Case : TO-247
Collector- Emitter Voltage VCEO Max : 125 V


Features:

· STMicroelectronics PREFERRED SALESTYPE
· NPN TRANSISTOR
· HIGH CURRENT CAPABILITY
· FAST SWITCHING SPEED
· VERY LOW SATURATION VOLTAGE AND HIGH GAIN



Application

· SWITCHING REGULATORS
· MOTOR CONTROL
· HIGH FREQUENCY AND EFFICENCY CONVERTERS



Specifications

Symbol
Parameter
Value
Unit
VCEV
Collector-Emitter Voltage (VBE = -1.5V)
200
V
VCEO
Collector-Emitter Voltage (IB = 0)
125
V
VEBO
Emitter-Base Voltage (IC = 0)
7
V
IE(RMS)
Emitter Current
40
A
IEM
Emitter Peak Current
120
A
IB
Base Current
8
A
IBM
Base Peak Current
24
A
Ptot
Total Power Dissipation at Tcase < 25 oC
200
W
Tstg
Storage Temperature
-65 to 150
Tj
Max. Operating Junction Temperature
150



Description

The BUT70W is a Multiepitaxial planar NPN transistor in TO-247 plastic package.

BUT70W is intented for use in high frequency and efficiency converters such us motor controllers and industrial equipment.




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