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BUT30V

Transistors Bipolar (BJT) NPN Power Module

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SeekIC No. : 00208688 Detail

BUT30V: Transistors Bipolar (BJT) NPN Power Module

BUT30V Data Sheet

floor Price/Ceiling Price

US $ 12.86~14.48 / Piece | Get Latest Price
Part Number:
BUT30V
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~71
  • 71~100
  • 100~250
  • 250~500
  • Unit Price
  • $14.48
  • $13.52
  • $13.17
  • $12.86
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 125 V
Emitter- Base Voltage VEBO : 7 V Maximum DC Collector Current : 100 A
DC Collector/Base Gain hfe Min : 27 Mounting Style : Through Hole
Package / Case : ISOTOP Packaging : Tube    

Description

Configuration :
Maximum Operating Frequency :
Maximum Operating Temperature :
Transistor Polarity : NPN
Mounting Style : Through Hole
Packaging : Tube
Emitter- Base Voltage VEBO : 7 V
Collector- Emitter Voltage VCEO Max : 125 V
Package / Case : ISOTOP
DC Collector/Base Gain hfe Min : 27
Maximum DC Collector Current : 100 A


Features:

*NPN TRANSISTOR
*HIGH CURRENT POWER BIPOLAR MODULE
* VERY LOW Rth JUNCTIONCASE 
*SPECIFIED ACCIDENTAL OVERLOAD AREAS
*ISOLATED CASE(2500VRMS)
*EASY TO MOUNT
*LOW INTERNAL PARASITIC INDUCTANCE




Application

*MOTORCONTROL
*SMPS&UPS
*WELDING EQUIPMENT


Specifications

 Symbol  Parameter  Value  Unit
 VCEV  Collector-Emitter Voltage (VBE=-5V)  200  V
 VCEO(sus)  Collector-Emitter Voltage (IB=0)  125  V
 VEBO  Emitter-Base Voltage (IC=0)  7  V
 IC  Collector Current  100  A
 ICM  Collector Peak Current (tp=10ms)  150  A
 IB  Base Current  20  A
 IBM  Base Peak Current (tp=10ms)  30  A
 Ptot  Total Dissipation at TC=25  250  W
 Tstg  Storage Temperature  -500 to 150  
 TJ  Max.Operating Junction Temperature  150  
 VISO  Insulation Withstand Voltage(AC-RMS)  2500  



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