Transistors Bipolar (BJT) NPN Power Module
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 300 V | ||
Emitter- Base Voltage VEBO : | 7 V | Maximum DC Collector Current : | 140 A | ||
DC Collector/Base Gain hfe Min : | 17 | Mounting Style : | Through Hole | ||
Package / Case : | ISOTOP | Packaging : | Tube |
Symbol | Parameter | Value | Unit |
VCEV | Collector-Emitter Voltage (VBE=-5V) | 400 | V |
VCEO(sus) | Collector-Emitter Voltage (IB=0) | 300 | V |
VEBO | Emitter-Base Voltage (IC=0) | 7 | V |
IC | Collector Current | 140 | A |
ICM | Collector Peak Current (tp=10ms) | 210 | A |
IB | Base Current | 28 | A |
IBM | Base Peak Current (tp=10ms) | 42 | A |
Ptot | Total Dissipation at TC=25 | 300 | W |
Tstg | Storage Temperature | -500 to 150 | |
TJ | Max.Operating Junction Temperature | 150 | |
VISO | Insulation Withstand Voltage(AC-RMS) | 2500 |