BUT12ATU

Transistors Bipolar (BJT) NPN Si Transistor

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SeekIC No. : 00211428 Detail

BUT12ATU: Transistors Bipolar (BJT) NPN Si Transistor

floor Price/Ceiling Price

Part Number:
BUT12ATU
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/11/23

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 450 V
Maximum DC Collector Current : 8 A Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Emitter- Base Voltage VEBO :
Maximum Operating Frequency :
DC Collector/Base Gain hfe Min :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Packaging : Tube
Maximum DC Collector Current : 8 A
Package / Case : TO-220
Collector- Emitter Voltage VCEO Max : 450 V


Parameters:

Technical/Catalog InformationBUT12ATU
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)450V
Current - Collector (Ic) (Max)8A
Power - Max100W
DC Current Gain (hFE) (Min) @ Ic, Vce-
Vce Saturation (Max) @ Ib, Ic1.5V @ 1.2A, 6A
Frequency - Transition-
Current - Collector Cutoff (Max)1mA
Mounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names BUT12ATU
BUT12ATU



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